Degradation effects of the active region in UV-C light-emitting diodes
作者： Johannes Glaab , Joscha Haefke , Jan Ruschel , Moritz Brendel , Jens Rass
DOI: 10.1063/1.5012608
关键词: Wide-bandgap semiconductor 、 Diode 、 Materials science 、 Light-emitting diode 、 Space charge 、 Ultraviolet 、 Optoelectronics 、 Absorption (electromagnetic radiation) 、 Photocurrent 、 Photoconductivity
摘要: An extensive analysis of the degradation characteristics AlGaN-based ultraviolet light-emitting diodes emitting around 265 nm is presented. The optical power LEDs stressed at a constant dc current 100 mA (current density = 67 A/cm2 and heatsink temperature = 20 °C) decreased to about 58% its initial value after 250 h operation. origin this effect has been studied using capacitance-voltage photocurrent spectroscopy measurements conducted before aging. overall device capacitance decreased, which indicates reduction net charges within space-charge region pn-junction during In parallel, excitation energies between 3.8 eV 4.5 eV induced by band-to-band absorption in quantum barriers 5.25 eV increased latter can be explained donor concentration active device. This could attributed compensation donors activation or diffusion acceptors, such as magnesium dopants group-III vacancies, region. results are consistent with observed since deep level acceptors also act non-radiative recombination centers.
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