Oxidation of ultrathin GaSe

作者: Thomas E. Beechem , Brian M. Kowalski , Michael T. Brumbach , Anthony E. McDonald , Catalin D. Spataru

DOI: 10.1063/1.4934592

关键词: PhotoluminescenceAugerX-ray photoelectron spectroscopyPhotochemistryHeterojunctionRaman spectroscopyAmorphous solidChemistryAnalytical chemistryLaserRedox

摘要: Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence Raman intensity reductions associated with spectral features GaSe are shown to coincide the emergence signatures emanating from by-products oxidation reaction, namely, Ga2Se3 amorphous Se. Photoinduced initiated over a portion flake highlighting potential for laser based patterning two-dimensional heterostructures via selective oxidation.

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