作者: Thomas E. Beechem , Brian M. Kowalski , Michael T. Brumbach , Anthony E. McDonald , Catalin D. Spataru
DOI: 10.1063/1.4934592
关键词: Photoluminescence 、 Auger 、 X-ray photoelectron spectroscopy 、 Photochemistry 、 Heterojunction 、 Raman spectroscopy 、 Amorphous solid 、 Chemistry 、 Analytical chemistry 、 Laser 、 Redox
摘要: Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence Raman intensity reductions associated with spectral features GaSe are shown to coincide the emergence signatures emanating from by-products oxidation reaction, namely, Ga2Se3 amorphous Se. Photoinduced initiated over a portion flake highlighting potential for laser based patterning two-dimensional heterostructures via selective oxidation.