A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear region
作者： Hongguan Yang , Hiroshi Inokawa
DOI: 10.1016/J.SSE.2012.05.065
关键词: Smoothing 、 Integrated circuit 、 Noise (electronics) 、 Extrapolation 、 Transconductance 、 Electronic engineering 、 MOSFET 、 Physics 、 Transistor 、 Topology 、 Threshold voltage
摘要: Abstract In order to alleviate the influence of fluctuation experimental data from noise and errors measurement systems, a differential smoothing technique has been introduced into extraction threshold voltage MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistors). The results show that transconductance versus gate ( g m – V ) curves could be smoother when rank grows. A criterion seek best optimal fitting curve, named as mismatch rate, proposed obtain parameter stably automatically. This will contribute analysis characteristics MOSFET designation integrated circuits.
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