In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications

作者: K. Sears , S. Mokkapati , H. H. Tan , C. Jagadish

DOI: 10.1007/978-0-387-74191-8_12

关键词: OptoelectronicsMaterials scienceMetalorganic vapour phase epitaxyQuantum dot

摘要:

参考文章(99)
VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, A Yu Egorov, AV Lunev, BV Volovik, IL Krestnikov, Yu G Musikhin, NA Bert, PS Kop’ev, Zh I Alferov, NN Ledentsov, D Bimberg, None, InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm Applied Physics Letters. ,vol. 74, pp. 2815- 2817 ,(1999) , 10.1063/1.124023
T. M. Cockerill, D. V. Forbes, H. Han, B. A. Turkot, J. A. Dantzig, I. M. Robertson, J. J. Coleman, Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD Journal of Electronic Materials. ,vol. 23, pp. 115- 119 ,(1994) , 10.1007/BF02655256
K. Sears, S. Mokkapati, M. Buda, H. H. Tan, C. Jagadish, In(Ga)As/GaAs quantum dots for optoelectronic devices Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series. ,vol. 6415, pp. 641506- ,(2006) , 10.1117/12.706526
R. L. Sellin, Ch. Ribbat, M. Grundmann, N. N. Ledentsov, D. Bimberg, Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers Applied Physics Letters. ,vol. 78, pp. 1207- 1209 ,(2001) , 10.1063/1.1350596
R. Fehse, I. Marko, A.R. Adams, Long wavelength lasers on GaAs substrates IEE Proceedings - Circuits, Devices and Systems. ,vol. 150, pp. 521- 528 ,(2003) , 10.1049/IP-CDS:20030959
P. Lever, H. H. Tan, C. Jagadish, Impurity free vacancy disordering of InGaAs quantum dots Journal of Applied Physics. ,vol. 96, pp. 7544- 7548 ,(2004) , 10.1063/1.1803948
Y. Arakawa, H. Sakaki, Multidimensional quantum well laser and temperature dependence of its threshold current Applied Physics Letters. ,vol. 40, pp. 939- 941 ,(1982) , 10.1063/1.92959
P. Lever, H. H. Tan, C. Jagadish, InGaAs quantum dots grown with GaP strain compensation layers Journal of Applied Physics. ,vol. 95, pp. 5710- 5714 ,(2004) , 10.1063/1.1707230
P. Lever, M. Buda, H.H. Tan, C. Jagadish, Investigation of the blueshift in electroluminescence spectra from MOCVD grown InGaAs quantum dots IEEE Journal of Quantum Electronics. ,vol. 40, pp. 1410- 1416 ,(2004) , 10.1109/JQE.2004.834777
Theodore Chung, Gabriel Walter, Nick Holonyak, Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition Journal of Applied Physics. ,vol. 97, pp. 053510- ,(2005) , 10.1063/1.1856218