Effect of γ-radiation on HfO2 based MOS capacitor
作者： F. Belgin Ergin , Raşit Turan , Sergiu T. Shishiyanu , Ercan Yilmaz
DOI: 10.1016/J.NIMB.2010.01.027
关键词: Microelectronics 、 Radiation 、 Optoelectronics 、 Irradiation 、 Semiconductor 、 Mos capacitor 、 Capacitor 、 Dielectric 、 Metal gate 、 Materials science
摘要: Abstract Radiation effects on Metal Oxide Semiconductor (MOS) capacitors with a HfO2 gate insulator have been studied. Because is promising high-k dielectric material for microelectronic applications, radiation its performance in MOS devices of interest. New results HfO2, particularly at low gamma doses, are presented. The compared other systems including those Al2O3 plus silicon based Si capacitors. Both different thicknesses were irradiated Co-60 source varying exposure time. midgap and flatband voltage shifts these measured analyzed. Results show that does not cause significant variations the especially doses.
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