Heterojunction light emitting diode
作者： Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi , Tze-Chiang Chen
DOI:
关键词: Dopant 、 Monocrystalline silicon 、 Conductivity 、 Doping 、 Substrate (electronics) 、 Materials science 、 Optoelectronics 、 Layer (electronics) 、 Light-emitting diode 、 Heterojunction
摘要: A method for forming a light emitting device includes monocrystalline III-V emissive layer on substrate and first doped the layer. contact is deposited The removed from by mechanical process. second formed side which has been removed. dopant conductivity opposite that of
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