Fabricating TFT having fluorocarbon-containing layer
作者： Yiliang Wu , Ping Liu , Beng S Ong
DOI:
关键词: Layer (electronics) 、 Chemical engineering 、 Materials science 、 Gate dielectric 、 Organic chemistry 、 Semiconductor 、 Fluorocarbon 、 Thin-film transistor 、 Thiophene
摘要: A process for fabricating a thin film transistor comprising: (a) forming gate dielectric; (b) layer including substance comprising fluorocarbon structure; and (c) semiconductor thiophene compound one or more substituted units, unsubstituted optionally divalent linkages, wherein the contacts dielectric is disposed between dielectric.
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