SYNTHESIS METHOD OF INDIUM TIN OXIDE(ITO) ELECTRON-BEAM RESIST AND PATTERN FORMATION METHOD OF ITO USING THE SAME
作者： Maeng Sung Lyul , Kim Ki Chul , Shin Sung Jin , Kang Dae Joon
DOI:
关键词: Dissolution 、 Indium tin oxide 、 Coating 、 Tetrahydrate 、 Resolution (electron density) 、 Cathode ray 、 Etching (microfabrication) 、 Materials science 、 Optoelectronics 、 Substrate (electronics)
摘要: A method for synthesizing an indium tin oxide electron beam resist and a forming ITO pattern are provided to form in various forms according resolution of recorder, solve problems caused during etching process or lift-off process. oxide(ITO) includes the steps of: providing chloride tetrahydrate dihydrate; dissolving dihydrate 2-ethoxy ethanol synthesize resist. (200) resist; (220) coating substrate with synthesized film; (240,260) by patterning film using recorder; (280) heat-treating pattern. Further, is used as solvent stabilizer.
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