Transient capacitance study of epitaxial CoSi2/Si〈111〉 Schottky barriers

摘要: Epitaxial CoSi2/Si structures, grown under ultrahigh vacuum conditions by annealing of room temperature deposited Co layers, are studied transient capacitance spectroscopy. No electron traps associated to diffusion have been detected in the Si bulk within DLTS detection limit 1011 cm−3. Nearly ideal Schottky diodes may thus be obtained for below 700 °C and CoSi2 film thickness up 200 A. In samples presenting carbon surface contamination prior evaporation, a continuum states is found, highly localized vicinity interface. The influence layer on defect concentration profile also studied. physical origin such extended defects briefly discussed.