Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport
作者： S. Takagi
DOI: 10.1109/VLSIT.2003.1221112
关键词: Optoelectronics 、 Materials science 、 Ballistic conduction 、 Effective mass (solid-state physics) 、 Electronic engineering 、 MOSFET
摘要: In this paper, we proposes a new design methodology of MOS channel engineering based on the optimization subband structures under full-ballistic transport regime and presents theoretical predictions.
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