作者: Hojoong Choi , Sehun Seo , Jong-Hoon Lee , Sang-Hyun Hong , Jaesun Song
DOI: 10.1039/C8TC01771A
关键词: Fabrication 、 Materials science 、 Optoelectronics 、 Photodiode 、 Layer (electronics) 、 Bilayer 、 Ultraviolet 、 Transport layer 、 Direct and indirect band gaps 、 Responsivity
摘要: UV phototransistors based on ZnO, a material considered promising owing to its wide direct bandgap and high stability in harsh environments, have been intensively investigated. However, ZnO single-layer phototransistors, especially solution-processed devices, still exhibit poor electrical photoresponse characteristics. Herein, we report the fabrication of low-cost, large-area, high-performance ZnO/SnO2 bilayer phototransistor with improved characteristics attained by inserting SnO2 carrier transport layer, which is actual path electrons. The photogenerated electrons are readily transferred from UV-sensitive layer lower conduction band than layer. In addition, efficient extraction through field effect mobility contributes improvement phototransistor. exhibits responsivity detectivity as well fast photoresponse. These results demonstrate that developed this study provides novel approach for improving performance low-cost large-area processing.