Comparative study of Cl2 + O2 and HBr + O2 plasma chemistries in respect to silicon reactive-ion etching process

摘要: Abstract The comparative study of Cl2 + O2 and HBr + O2 plasma chemistries in respect to Si reactive-ion etching process was carried out. Both diagnostics modeling tools were applied compare effects gas mixing ratios on steady-state parameters densities active species as well determine key processes Cl Br atom kinetics. It found that a) the variation Cl2/O2 HBr/O2 produces opposite changes both electrons-related ions-related corresponding systems; b) stepwise dissociation pathways, such Cl2 + O/O(1D) → ClO + Cl HBr + O/O(1D) OH + Br, have no principal influence halogen formation rates; c) higher rate lower recombination frequency for atoms always provide condition [Cl] > [Br]. data fluxes provided analysis kinetics terms process-condition-dependent reaction probability yield. suggested are sensitive O flux through oxidation products into volatile SiClxOy SiBrxOy compounds.