作者: P. Alpuim , V. Correia , E.S. Marins , J.G. Rocha , I.G. Trindade
DOI: 10.1016/J.TSF.2011.01.300
关键词: Ohmic contact 、 Piezoresistive effect 、 Sensor array 、 Flexible electronics 、 Materials science 、 Optoelectronics 、 Nanocrystalline silicon 、 Thin film 、 Reactive-ion etching 、 Gauge factor
摘要: Abstract N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor − 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 °C. The piezoresistive response under cyclic quasi-static dynamical (up 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 100 μm thickness 120 nm defined an array reactive ion etching. Metallic pads, forming ohmic contacts sensing elements, lift-off process. A readout circuit for mutiplexer each row column matrix proposed. digital data will be processed, interpreted stored internally ultra low-power micro controller, also responsible communication two-way wireless data, e.g. inside outside human body.