Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry
作者： R.W. Collins , A.S. Ferlauto , G.M. Ferreira , Chi Chen , Joohyun Koh
DOI: 10.1016/S0927-0248(02)00436-1
关键词: Phase (matter) 、 Plasma-enhanced chemical vapor deposition 、 Protocrystalline 、 Amorphous solid 、 Thin film 、 Analytical chemistry 、 Chemical vapor deposition 、 Materials science 、 Amorphous silicon 、 Silicon
摘要: Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can guide the fabrication of hydrogenated silicon (Si:H) thin films at low temperatures (<300°C) for highest performance electronic devices such as solar cells. The simplest incorporate a single transition from amorphous growth regime mixed-phase (amorphous+microcrystalline) versus accumulated film thickness [the a→(a+μc) transition]. These have shown optimization (a-Si:H) intrinsic layers by RF plasma-enhanced chemical vapor (PECVD) rates is achieved using maximum possible flow ratio H2 SiH4 be sustained while avoiding transition. More recent studies suggested similar strategy appropriate p-type Si:H films. simple extended include in addition which roughening detected regime. It proposed a-Si:H higher rate PECVD processes further requires onset this
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