Electronic structure of Ni and other transition-metal silicide overlayers on Si

作者: J Robertson

DOI: 10.1088/0022-3719/18/4/023

关键词: CrystallographyExtended X-ray absorption fine structureMaterials scienceMonolayerTransition metalNickelElectronic structureSilicide

摘要: The electronic structure of Ni overlayers on Si (111) has been calculated by the tight-binding method for various possible bonding geometries. Surface EXAFS suggests nickel exists at six- or sevenfold-coordinated, Ni6 Ni7, sites buried between topmost layers Si. authors results favour geometry which EF lies in lower gap, as observed, while Ni7 configuration appears to be less stable. A general model other transition-metal is developed. Co5 CoSi2:Si(111) interfaces rationalised and an interstitial threefold coordination suggested Co monolayers account photoemission data.

参考文章(47)
D. M. Bylander, Leonard Kleinman, Kenneth Mednick, Self-consistent energy bands and bonding ofNi3Si Physical Review B. ,vol. 25, pp. 1090- 1095 ,(1982) , 10.1103/PHYSREVB.25.1090
K. L. I. Kobayashi, S. Sugaki, A. Ishizaka, Y. Shiraki, H. Daimon, Y. Murata, Ni on Si: Interfacial compound formation and electronic structure Physical Review B. ,vol. 25, pp. 1377- 1380 ,(1982) , 10.1103/PHYSREVB.25.1377
R. T. Tung, J. M. Gibson, J. M. Poate, Growth of single crystal epitaxial silicides on silicon by the use of template layers Applied Physics Letters. ,vol. 42, pp. 888- 890 ,(1983) , 10.1063/1.93776
L.J. Brillson, Advances in understanding metal-semiconductor interfaces by surface science techniques Journal of Physics and Chemistry of Solids. ,vol. 44, pp. 703- 733 ,(1983) , 10.1016/0022-3697(83)90002-1
F Guinea, J Sanchez-Dehesa, F Flores, Schottky barrier formation. I. Abrupt metal-semiconductor junctions Journal of Physics C: Solid State Physics. ,vol. 16, pp. 6499- 6512 ,(1983) , 10.1088/0022-3719/16/33/021
G. Ottaviani, K. N. Tu, J. W. Mayer, Interfacial Reaction and Schottky Barrier in Metal-Silicon Systems Physical Review Letters. ,vol. 44, pp. 284- 287 ,(1980) , 10.1103/PHYSREVLETT.44.284
PE Schmid, PS Ho, H Föll, TY Tan, None, Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces Physical Review B. ,vol. 28, pp. 4593- 4601 ,(1983) , 10.1103/PHYSREVB.28.4593
GW Rubloff, PS Ho, JF Freeouf, JE Lewis, None, Chemical bonding and reactions at the Pd/Si interface Physical Review B. ,vol. 23, pp. 4183- 4196 ,(1981) , 10.1103/PHYSREVB.23.4183
J. M. Andrews, J. C. Phillips, Chemical Bonding and Structure of Metal-Semiconductor Interfaces Physical Review Letters. ,vol. 35, pp. 56- 59 ,(1975) , 10.1103/PHYSREVLETT.35.56
Steven G. Louie, James R. Chelikowsky, Marvin L. Cohen, Ionicity and the theory of Schottky barriers Physical Review B. ,vol. 15, pp. 2154- 2162 ,(1977) , 10.1103/PHYSREVB.15.2154