Size-suppressed dielectrics of Ge nanocrystals: skin-deep quantum entrapment
作者： Eunice S. M. Goh , T. P. Chen , H. Y. Yang , Y. Liu , C. Q. Sun
DOI: 10.1039/C2NR11154C
关键词: Semiconductor 、 Band gap 、 Electron 、 Dielectric 、 Condensed matter physics 、 Materials science 、 Quantum dot 、 Nanocrystal 、 Nanotechnology 、 Quantum 、 Dangling bond
摘要: Although the dielectric behavior of nanostructured semiconductors has been intensively investigated, physics behind observations remains disputed with possible mechanisms such as quantum confinement and dangling bond polarization. Here we show that theoretical reproduction measured suppression Ge nanocrystals asserts originates from shorter stronger bonds at skin-deep surface, associated local densification entrapment energy. Coordination-imperfection induced perturbs Hamiltonian determines band gap hence, process electron polarization consequently.
harvard.edu
rsc.org
sci-hub.se 参考文章(25)
Minoru Fujii, Shinji Hayashi, Keiichi Yamamoto, Raman scattering from quantum dots of Ge embedded in SiO2 thin films Applied Physics Letters. ,vol. 57, pp. 2692- 2694 ,(1990) , 10.1063/1.103802
Chang Q. Sun, Size dependence of nanostructures: Impact of bond order deficiency Progress in Solid State Chemistry. ,vol. 35, pp. 1- 159 ,(2007) , 10.1016/J.PROGSOLIDSTCHEM.2006.03.001
S. S. Batsanov, K. B. Poyarkov, S. M. Gavrilkin, The effect of the atomic structure on dielectric properties of nanomaterials Doklady Physics. ,vol. 54, pp. 407- 409 ,(2009) , 10.1134/S1028335809090018
Xiying Ma, ZhiJun Yan, Baohe Yuan, Baojun Li, The light-emitting properties of Ge nanocrystals grown by pulsed laser deposition Nanotechnology. ,vol. 16, pp. 832- 835 ,(2005) , 10.1088/0957-4484/16/6/036
Serdar Öğüt, James R. Chelikowsky, Steven G. Louie, Quantum Confinement and Optical Gaps in Si Nanocrystals Physical Review Letters. ,vol. 79, pp. 1770- 1773 ,(1997) , 10.1103/PHYSREVLETT.79.1770
D. A. G. Bruggeman, Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen Annalen der Physik. ,vol. 416, pp. 636- 664 ,(1935) , 10.1002/ANDP.19354160705
Xiying Ma, Weilin Shi, Baojun Li, The size dependence of the optical and electrical properties of Ge quantum dots deposited by pulsed laser deposition Semiconductor Science and Technology. ,vol. 21, pp. 713- 716 ,(2006) , 10.1088/0268-1242/21/5/026
P. Alfaro, A. Miranda, A.E. Ramos, M. Cruz-Irisson, Hydrogenated Ge nanocrystals: band gap evolution with increasing size Brazilian Journal of Physics. ,vol. 36, pp. 375- 378 ,(2006) , 10.1590/S0103-97332006000300038
S. S. Batsanov, V. I. Galko, K. V. Papugin, Dielectric permittivity and electrical conductivity of polycrystalline materials Inorganic Materials. ,vol. 46, pp. 1365- 1368 ,(2010) , 10.1134/S0020168510120174
Y. M. Niquet, G. Allan, C. Delerue, M. Lannoo, Quantum confinement in germanium nanocrystals Applied Physics Letters. ,vol. 77, pp. 1182- 1184 ,(2000) , 10.1063/1.1289659