Defect induced structural and thermoelectric properties of Sb2Te3 alloy
作者： Diptasikha Das , K. Malik , A. K. Deb , Sandip Dhara , S. Bandyopadhyay
DOI: 10.1063/1.4927283
关键词: Raman spectroscopy 、 Scattering 、 Surface states 、 Thermoelectric effect 、 X-ray crystallography 、 Condensed matter physics 、 Materials science 、 Alloy 、 Electrical resistivity and conductivity 、 Seebeck coefficient
摘要: Structural and thermoelectric properties of metallic semiconducting Sb2Te3 are reported. X-Ray diffraction Raman spectroscopy studies reveal that sample has higher defect density. Nature origin possible defects highlighted. Semiconducting hosts larger numbers defects, which act as scattering center give rise to the increased value resistivity, thermopower, power factor. Thermopower data indicate p-type nature synthesized samples. It is evidenced surface states often mixed with bulk state, giving metallicity in Sb2Te3. Role different mechanism on property discussed.
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