Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature
作者： K. Ding , M. T. Hill , Z. C. Liu , L. J. Yin , P. J. van Veldhoven
DOI: 10.1364/OE.21.004728
关键词: Optoelectronics 、 Optics 、 Semiconductor 、 Continuous wave 、 Laser 、 Laser linewidth 、 Amplified spontaneous emission 、 Semiconductor laser theory 、 Materials science 、 Spontaneous emission 、 Lasing threshold
摘要: We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity cavity volume of 0.67λ3 (λ = 1591 nm) shows linewidth 0.5 nm RT, which corresponds to Q-value 3182 compared 235 the Q, highest Q under lasing condition for RT CW operation any laser. Such record performance provides convincing evidences feasibility lasers, thus opening wide range practical possibilities novel nanophotonic devices based on metal-semiconductor structures.
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