Resistive switching in transition metal oxides
作者： Akihito Sawa
DOI: 10.1016/S1369-7021(08)70119-6
关键词: Nanotechnology 、 Transition metal 、 Resistive switching 、 Non-volatile memory 、 Optoelectronics 、 Materials science 、 Memory cell 、 Random access memory 、 Resistive random-access memory 、 Flash memory 、 Voltage
摘要: … oxides, such as binary metal oxides 2 . Bipolar resistive switching shows directional resistive switching … This type of resistive switching behavior occurs with many semiconducting …
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