Bias-crafted magnetic tunnel junctions with bistable spin-dependent states
作者： M. Bowen , J.-L. Maurice , A. Barthélémy , P. Prod’homme , E. Jacquet
DOI: 10.1063/1.2345592
关键词: Materials science 、 Spin (physics) 、 Quantum tunnelling 、 Spintronics 、 Nuclear magnetic resonance 、 Bistability 、 Electron energy loss spectroscopy 、 Magnetic switching 、 Oxide 、 Lanthanum compounds 、 Condensed matter physics 、 Physics and Astronomy (miscellaneous)
摘要: The authors have observed stable, reversible two-resistance states with substantial tunneling magnetoresistances of opposite signs in La0.7Sr0.3MnO3∕SrTiO3∕Co1−xCrx junctions. Electron energy loss spectroscopy studies reveal the segregation and oxidation electrochemically reactive chromium at that interface, resulting oxygen vacancies oxide barrier. Bias-induced switching between two junction is argued to reflect incidence these barrier defects near electrically unstable SrTiO3∕Co1−xCrx interface. This affirms bias crafting as an additional lever spintronic research across semiconducting spacers.
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