Integrated Phased Array Systems in Silicon
作者： A. Hajimiri , H. Hashemi , A. Natarajan , Xiang Guan , A. Komijani
DOI: 10.1109/JPROC.2005.852231
关键词: Engineering 、 Electronic engineering 、 Low-noise amplifier 、 CMOS 、 MOSFET 、 Transmitter 、 Bipolar junction transistor 、 Heterojunction bipolar transistor 、 Electrical engineering 、 Phased array 、 Amplifier
摘要: Silicon offers a new set of possibilities and challenges for RF, microwave, millimeter-wave applications. While the high cutoff frequencies SiGe heterojunction bipolar transistors ever-shrinking feature sizes MOSFETs hold lot promise, design techniques need to be devised deal with realities these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, high-frequency coupling issues. As an example complete system integration in silicon, this paper presents first fully integrated 24-GHz eight-element phased array receiver 0.18-/spl mu/m silicon-germanium four-element transmitter power amplifiers CMOS. The are capable beam forming can used communication, ranging, positioning, sensing
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