Nanowelded Multichannel Carbon-Nanotube Field-Effect Transistors (MC-CNTFETs)

摘要: The silicon-based electronic technology has made quite a great progress in the past five decades since invention of integrated circuit [1]. advance is maintained primarily through size scaling devices, i.e., metal-oxide-semiconductor field-effect transistor (MOSFET), which resulted many successive generations devices with increased performance and density. In case continual decrease for device dimensions at present speed, most scientists forecast that development will meet its physical theoretical limit soon, perhaps next decade [2–4]. To keep continuing to update, seeking preparation new technologies mandatory [5]. So far, two distinct routes have been taken address issue. One them adopt revolutionary based on totally concepts, e.g., two-terminal molecular [6], quantum computing [7], spintronics [8], so on. However, these be incompatible application developed from industry. other case, attention paid more evolutionary approach well-established three terminal concept, but utilizes alternative materials, specially single-walled carbon nanotubes (SWCNTs) possess unique advantages including onedimensional nanoscale structure as well excellent electrical optical properties High-mobility, low-defect intrinsic nanometer scale (CNTs) led an intense research effort into viability utilizing carbon-nanotube transistors (CNTFETs) replacement for, or complement to, future semiconductor [9–17].