Atomic Layer Deposition of Zn(O,S) Alloys Using Diethylzinc with H2O and H2S: Effect of Exchange Reactions
作者： Diane K. Lancaster , Huaxing Sun , Steven M. George
关键词: Valence band 、 Thin film 、 Sulfur content 、 Nanotechnology 、 Atomic layer deposition 、 Reaction conditions 、 Analytical chemistry 、 Band gap 、 Diethylzinc 、 Thermal conduction 、 Materials science
摘要: Zn(O,S) thin films have a tunable band gap and are useful as conduction valence buffers in various types of solar cells. Previous growth by atomic layer deposition (ALD) has utilized alternating cycles ZnO ALD ZnS ALD. Controlling the composition alloys using is complicated because an efficient exchange reaction between gaseous H2S given ZnOH* + → ZnSH* H2O. This facile leads to higher than expected sulfur content films. In this study, effect on was examined varying conditions. For cycles, film strongly affected temperature size exposure. An alternative method that avoids also employed grow uses codosing H2O at 100 °C. Codo...
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