Recent advances in strained silicon devices for enabling electro-optical functionalities

作者: Irene Olivares , Todora Ivanova Angelova , Ana Maria Gutierrez , Pablo Sanchis

DOI: 10.1109/ICTON.2017.8024836

关键词: SiliconStrained siliconPhotonicsPockels effectOptoelectronicsSilicon on insulatorMaterials scienceCladding (fiber optics)Silicon nitrideHybrid silicon laser

摘要: … the crystal symmetry of silicon. Since then, strained silicon devices have been developed by … layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. However, it …

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