Application of Auger electron spectroscopy to studies of the silicon/silicide interface

摘要: We discuss the use of Auger electron spectroscopy to obtain chemical state information about transition‐metal/Si and silicide/Si interfaces. Characteristic Si L2,3VV spectra for silicides nine different transition metals are presented analyzed in terms bonding compounds. The peak shape analysis depth profiles is illustrated by detection thin silicide layers at metal/Si interface as‐deposited samples. possibility changes induced inert gas ion bombardment discussed this effect proposed explain almost identical LVV shapes observed a particular metal. Pd2Si shown be stable against bombardment‐induced changes, system sequential deposition studies Pd on yield basically same as does sputter profiling.