An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
作者： Jingjing Xie , Jo Shien Ng , Chee Hing Tan
DOI: 10.1109/JPHOT.2013.2272776
关键词: Avalanche breakdown 、 Avalanche diode 、 Single-photon avalanche diode 、 Optics 、 Photodetector 、 Dark current 、 Avalanche photodiode 、 APDS 、 Breakdown voltage 、 Optoelectronics 、 Materials science
摘要: Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) photodiodes (APDs) were measured at temperatures ranging from 77 K 300 K. To avoid possible ambiguity in breakdown voltage due edge tunneling current, a phase-sensitive detection method with tightly focused light spot the center of device was employed measure accurately. An extrapolation 1/M zero used deduce voltage, which temperature coefficient Cbd derived. The value 1/4 8 mV/K, obtained for AlAsSb SAM APDs, is much smaller than that commercial Si InGaAs/InP well other APDs literature, demonstrating potential regions improving thermal stability APDs.
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