Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes

摘要: Single-electron transistors include first and second electrodes an insulating layer between them on a substrate. The has thickness that defines spacing the electrodes. At least one nanoparticle is provided layer. Accordingly, desired may be obtained without need for high resolution photolithography. An electrically-gated single-electron transistor formed, wherein gate electrode at opposite end. Alternatively, chemically-gated formed by providing analyte-specific binding agent surface of nanoparticle. Arrays also fabricated forming post substrate, conformally portion electrode. placed layer,