Method of manufacturing photoelectric semi-conductor devices

摘要: 991,291. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Oct. 6, 1961 [Oct. 11, 1960], No. 36024/61. Heading H1K. In a method of making device comprising body semi-conductor material having surface layer given conductivity type and an underlying part the opposite type, after have been provided with contacts these connected to measuring device, is irradiated light treated remove from while photoelectric output being measured, removal stopped still monitored. Production shown in Fig. 6 starts disc gallium doped silicon on which uniform N- formed by diffusion treatment phosphorus atmosphere. The masked beeswax except for central area one face, etched aq. HF/HNO 3 produce pit shown. After masking electrode 5 Ag/2% Al 1 annular pure Ag soldered 2. Leads fixed electrodes are device. again face 9 Assuming etching rate be constant curve v. time, represents relationship between decrease thickness layer. Similar curves also semi-conductors other than silicon. continuously monitored ensure that not before d 2 I/dt = 0 (at point 22), preferably continued until dI/dt 0, at maximum sensitivity 21. protected lacquer (broken lines 6). may carried out grinding, sand-blasting, electron bombardment, electrolytic etching. some cases monitoring rapidly alternated avoid interference measurements. While invention primarily used production high photo-electric devices it applicable manufacture transistors diodes thin layers accurately determined depth.