Solid phase epitaxy of Na-ion irradiated α-quartz: Cathodoluminescence, kinetics and surface morphology

作者: S. Gąsiorek , P.K. Sahoo , K.P. Lieb , S. Dhar , T. Sajavaara

DOI: 10.1016/J.JNONCRYSOL.2006.04.019

关键词: DopingAnalytical chemistryCrystal growthAnnealing (metallurgy)ChannellingEpitaxyElastic recoil detectionIon implantationCathodoluminescenceMaterials science

摘要: Abstract Even at low fluences doping of quartz by ion implantation results in amorphization. Here we report on the measurement cathodoluminescence and surface structures during solid phase epitaxy Na-implanted α-quartz annealed 18O2 atmosphere. Complete was achieved under appropriate conditions fluence, annealing temperature time. The crystalline structure samples studied Rutherford backscattering channelling spectroscopy 18O–16O exchange between matrix gas elastic recoil detection analysis. In spectra taken room temperature, five bands were identified assigned to various defect centres. Two violet region 3.25 3.65 eV strongly vary intensity 843–1173 K appear be intimately correlated with presence Na-ions implanted matrix. Finally, atomic force microscopy enabled, for first time, observation correlation epitaxy.

参考文章(42)
Hari Singh Nalwa, Encyclopedia of nanoscience and nanotechnology American Scientific Publishers. ,(2011)
P. K. Sahoo, S. Dhar, S. Gasiorek, K. P. Lieb, Stable violet cathodoluminescence of α-quartz after Ge+ implantation at elevated temperature Journal of Applied Physics. ,vol. 96, pp. 1392- 1397 ,(2004) , 10.1063/1.1767973
H. S. Bae, T. G. Kim, C. N. Whang, S. Im, J. S. Yun, J. H. Song, Electroluminescence mechanism in SiOx layers containing radiative centers Journal of Applied Physics. ,vol. 91, pp. 4078- 4081 ,(2002) , 10.1063/1.1452768
L. Rebohle, J. von Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Fröb, K. Leo, Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers Applied Physics Letters. ,vol. 71, pp. 2809- 2811 ,(1997) , 10.1063/1.120143
G.W. Arnold, Ion implantation effects in crystalline quartz Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 65, pp. 213- 216 ,(1992) , 10.1016/0168-583X(92)95036-Q
J.-F Poggemann, A Goß, G Heide, E Rädlein, G.H Frischat, Direct view of the structure of a silica glass fracture surface Journal of Non-crystalline Solids. ,vol. 281, pp. 221- 226 ,(2001) , 10.1016/S0022-3093(00)00421-X
M. Gustafsson, F. Roccaforte, J. Keinonen, W. Bolse, L. Ziegeler, K. P. Lieb, Oxygen-activated epitaxial recrystallization of Li-implanted α-SiO 2 Physical Review B. ,vol. 61, pp. 3327- 3332 ,(2000) , 10.1103/PHYSREVB.61.3327
P. K. Sahoo, S. Gąsiorek, K. P. Lieb, K. Arstila, J. Keinonen, Achieving epitaxy and intense luminescence in Ge∕Rb-implanted α-quartz Applied Physics Letters. ,vol. 87, pp. 021105- ,(2005) , 10.1063/1.1994953
Y. Q. Wang, G. L. Kong, W. D. Chen, H. W. Diao, C. Y. Chen, S. B. Zhang, X. B. Liao, Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix Applied Physics Letters. ,vol. 81, pp. 4174- 4176 ,(2002) , 10.1063/1.1525395
V. J. Fratello, J. F. Hays, D. Turnbull, Dependence of growth rate of quartz in fused silica on pressure and impurity content Journal of Applied Physics. ,vol. 51, pp. 4718- 4728 ,(1980) , 10.1063/1.328346