Interface states on semiconductor/insulator surfaces
作者： A. Goetzberger , E. Klausmann , M. J. Schulz
DOI: 10.1080/10408437608243548
关键词: Surface states 、 Semiconductor 、 Metal-induced gap states 、 Insulator (electricity) 、 Materials science 、 Condensed matter physics 、 Spin density wave 、 Impurity 、 Crystal structure 、 Density of states
摘要: Abstract It is well known that impurities and defects in semiconductors are associated with energy levels the forbidden gap. Similar states occur at surface of a semiconductor where crystal lattice symmetry strongly disturbed. These called states. Owing to two-dimensional nature surface, their density measured per unit area, contrast bulk states, which volume. A third type similar occurs interface between two adjacent materials. Very often they also simply
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