Band-offset transitivity in strained (001) heterointerfaces.
作者： Y. Foulon , C. Priester
关键词: Electronic structure 、 Semiconductor materials 、 Inorganic compound 、 Self consistency 、 Band offset 、 Valence band 、 Tight binding 、 Condensed matter physics 、 Heterojunction 、 Physics
摘要: Energy-band lineups at several [100] heterojunctions of III-V semiconductors are calculated using a self-consistent tight-binding treatment. The calculations exhibit transitivity to within 0.2 eV for ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{Al}}_{\mathit{y}}$As/InP, GaAs/InAs/InP, GaAs/GaP/InP, and GaSb/GaAs/InAs. For the results in good agreement with experimental data. where constituents share neither common anion nor cation, two possible interfaces do not necessarily lead single-band offset. This, also strain configuration, has be considered when applying rule (that is, fact that three semiconductors, A, B, C, band offset heterojunction A/B can deduced from offsets A/C C/B), provided we take care material C corresponds interface.
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