Effect of annealing temperature on the structural, morphological and optical properties of ThO2 thin films grown by photochemical metal–organic deposition

摘要: Abstract In this work, we report the influence of annealing temperature on structural, morphological and optical properties ThO2 thin films deposited fused quartz (100) silicon substrates by photochemical metal–organic deposition (PMOD) using hinokitiolate thorium (IV) complex as precursor. X-ray photoelectron spectroscopy (XPS) confirmed films. The effect thermal (from 300 °C to 1100 °C) structural was evaluated with diffraction (XRD), UV–Vis transmittance spectroscopy, spectroscopic ellipsometry atomic force microscopy (AFM). XRD patterns annealed above revealed that all peaks belong a cubic structure without preferential orientation. average crystallite size increased from 2.3 nm 3.7 nm 750 °C. Annealing at 1100 °C promoted formation huttonite (β-ThSiO4) in layer. Films showed 80% visible range, did not impact band gap energy. AFM studies increased, film surface roughness decreased. Between 750 °C 950 °C, relatively smooth an RMS range 2.3–5.0 nm. values refractive index were n = 1.6 for as-deposited n = 2.1 This result suggests potential use transparent reflector material short wavelengths.