Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition
作者： Chengbing Wang , Jing Shi , Rongbin Xia , Zhongrong Geng
DOI: 10.1002/SIA.5162
关键词: X-ray photoelectron spectroscopy 、 Microstructure 、 Fourier transform infrared spectroscopy 、 Nanostructure 、 Carbon film 、 Analytical chemistry 、 Amorphous carbon 、 Raman spectroscopy 、 Materials science 、 Chemical vapor deposition
摘要: Hydrogenated amorphous carbon films (a-C : H) were prepared by d.c.-pulse plasma chemical vapor deposition using CH4 and H2 gases. The microstructure hardness of the resulting investigated at different pressures (6, 8, 11, 15, 20 Pa). growth rate increased sharply from 3.2 to 10.3 nm/min with increasing pressure 6 20 Pa. According Raman spectra, XPS, Fourier transform infrared analysis, deposited 8 Pa have high sp3 content show typical diamond-like character. However, microstructures bond configuration 20 Pa sp2 favored fullerene-like nanostructure. shown reach their minimum values simultaneously a then continuously. film nanostructure obtained displays ID/IG ratio (~1.6), low XPS C 1s binding energy (284.4 eV). microstructural analysis indicates that are composed hard locally dense network, i.e. predominantly sp2-bonded material. rigidity is basically provided matrix dispersed cross-linked sites. Copyright © 2012 John Wiley & Sons, Ltd.
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