Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

摘要: Abstract The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized current–voltage ( I – V ) measurement under a dark condition while n-ZnO/n-Si showed weak behaviors. Photoelectric effects exhibited an illuminated using red light of 670 nm. High photocurrent or responsivities are obtained reverse bias when crystalline quality film is good enough to transmit into p-Si.