作者: Le Yu , Yaozu Guo , Haoyu Zhu , Mingcheng Luo , Ping Han
DOI: 10.3390/MI11090800
关键词: Microbolometer 、 Microelectromechanical systems 、 Integrated circuit 、 Cardinal point 、 CMOS 、 Fabrication 、 Optoelectronics 、 Detector 、 Materials science 、 Pixel
摘要: The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. fabrication of CMOS-compatible focal plane arrays (IRFPAs) is based on combination standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With technological development, performance commercialized microbolometers shows only small gap with that mainstream ones. This paper reviews basics recent advances IRFPAs in aspects pixel structure, read-out integrated circuit (ROIC), array, vacuum packaging.