Programming a phase-change material memory
作者： Tyler A. Lowrey
DOI:
关键词: Condensed matter physics 、 Chalcogenide 、 Phase-change material 、 Electronic engineering 、 Electrical resistivity and conductivity 、 State (computer science) 、 Amorphous solid 、 Pulse (physics) 、 Reset (computing) 、 Alloy 、 Materials science
摘要: The memory device has constituent cells which include a structural phase-change material to store the data. This may be, for instance, chalcogenide alloy. A first pulse is applied cell leave in state, such as reset state relatively amorphous and high resistivity. Thereafter, second change from second, different set crystalline low generally triangular shape, rather than rectangular one.
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