Semiconductor memory device including an SOI substrate
作者： Katsuhiro Suma , Hideto Hidaka , Takahiro Tsuruda
DOI:
关键词: Materials science 、 Substrate (electronics) 、 Body region 、 Field-effect transistor 、 Semiconductor memory 、 Metal gate 、 Optoelectronics 、 Silicon on insulator 、 Transistor 、 Electrical engineering 、 Soi substrate
摘要: A semiconductor memory device includes a plurality of N and P channel MOS transistors. The transistors are formed on an SOI (Silicon On Insulator) substrate. Each transistor source region, drain body region located between the region. at least one is electrically fixed. rendered floating.
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