Investigation of porous silicon thin films for electrochemical hydrogen storage

摘要: Abstract In this study, nanoporous silicon (PS) layers have been elaborated and used for hydrogen storage. The effect of the thickness, porosity specific surface area porous on amount chemically bound to structures is studied by Infrared spectroscopy (FTIR), cyclic voltammetry (CV), contact angle capacitance –voltage measurements. electrochemical characterization storage were carried out in a three-electrode cell, using sulfuric acid 3 M H2SO4 as electrolyte impedance (EIS) galvanostatic charge/discharge. results indicate presence two oxidation peaks at 0.2 V 0.4 V anodic side corresponding desorption reduction peak −0.2 V cathodic sorption hydrogen. Moreover, EIS studies performed PS electrode show that hodograph contains semicircle high frequency region line lower zone. An equivalent circuit has proposed; values elements experimental spectra determined discussed. Finally, highest was 86 mAh/g. This capacity decreases only 7% initial value, after 40 cycles.