Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol–Gel Spin Coating Method

摘要: In the present study, niobium-doped indium oxide thin films were prepared by sol–gel spin coating technique. The effects of different Nb-doping contents on structural, morphological, optical, and electrical properties characterized means X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force (AFM), UV–Vis spectroscopy, four point probe methods. XRD analysis confirmed formation cubic bixbyite structure In2O3 with a small shift in major peak position toward lower angles addition Nb. FESEM micrographs show that grain size decreased increasing content. Optical studies revealed optimum opto-electronic properties, including minimum resistivity 119.4 × 10−3 Ω cm an average optical transmittance 85% visible region band gap 3.37 eV achieved for doped content 3 at.%. AFM Nb at leads to compact smooth surface less roughness compared films.