Defect Control and Properties in Bismuth Layer Structured Ferroelectric Single Crystals

作者: Yuji Noguchi , Masaru Miyayama

DOI: 10.1007/978-1-4419-9598-8_14

关键词: Polarization (electrochemistry)Oxygen vacancyLayer (electronics)Materials sciencePiezoelectricityBismuthOptoelectronicsFerroelectricityClamping

摘要: The static and dynamic behaviors of ferroelectric domains are the underlying basis various functional properties materials, such as dielectricity, piezoelectricity, ferroelectricity, electro-optic acoustic-optic effects. Since performance devices is governed by these behaviors, techniques for enhancing device have been widely investigated with aim controlling [19, 20, 88, 109]. Such control, however, often prevented not only a large leakage current but also undesirable domain clamping [16, 73, 95], fatigue [17, 98], aging [63, 68], imprinting [110], depoling [98]. Ferroelectric thus suffer from degraded polarization poor reliability due to insufficient control over domains. It considered that properties, fatigue, aging, etc. interaction between defects

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