Vapor-liquid-solid and melt growth of silicon carbide

摘要: Abstract The growth of beta silicon carbide by the hydrogen reduction methyltrichlorosilane onto carbon substrates at 1500 °C is discussed. It shown that alpha inclusions present are rare 2H (wurtzite) modification and their presence resulted from a vapor-liquid-solid which was dominated impurities in substrate. By carefully cleaning substrate purifying methyltrichlorosilane, were eliminated. crystals then deliberately grown introducing selected locally on Beta also intentionally technique other appropriate impurities. Growth melt briefly