Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
作者： Hideki Fukano , Hiroshi Egusa , Shuji Taue , Tomonari Sato , Manabu Mitsuhara
关键词: Diffusion (business) 、 Base (exponentiation) 、 Optoelectronics 、 Absorption (electromagnetic radiation) 、 Wavelength 、 Responsivity 、 Absorption layer 、 Materials science 、 Heterojunction 、 Electron 、 General Engineering 、 General Physics and Astronomy
摘要: The responsivity characteristics of heterojunction phototransistors (HPTs) with a strained InAs/InGaAs multiquantum well (MQW) absorption layer inserted in the base or collector are investigated. It is shown that although hetero-emitter injects hot electrons into base, effective electron diffusion length MQWs becomes five times lower than without MQWs. This results higher current gain for HPTs collector. In addition, enhanced coefficient due to excitonic observed only on HPT MQW Due these two factors, high more 10 A/W realized at wavelength around 2.35 µm device
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