Temperature dependence of electronic states in (TaSe4)2I.
作者： A. Terrasi , M. Marsi , H. Berger , G. Margaritondo , R. J. Kelley
关键词: Electronic states 、 Peierls transition 、 Spectral function 、 Standard Model 、 Transition temperature 、 Condensed matter physics 、 Band gap 、 Materials science 、 Brillouin zone 、 Electrical resistivity and conductivity
摘要: Angle-resolved photoemissions studies were conducted on single-crystal (TaSe4)(2)I samples above and below the charge-density-wave transition temperature (T-CDW) of 260 K. We observed a shift leading photoemission edge between 300 60 K consistent with resistivity measurements performed same sample: band gap opens throughout Brillouin zone T-CDW. However, several aspects data are difficult to reconcile any standard model.
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