Galvanostatic deposition of Cu2O layers through the electrogeneration of base route
作者： T. MAHALINGAM , C. SANJEEVIRAJA , S. ESTHER DALI , M. JAYACHANDRAN , M. J. CHOCKALINGAM
关键词: Oxide 、 Current (fluid) 、 Base (chemistry) 、 Voltage 、 Mineralogy 、 Deposition (chemistry) 、 Current density 、 Materials science 、 Cell voltage 、 Analytical chemistry
摘要: The dependence of the cell voltage on deposition time for current densities 0.3, 0.6, 0.9, 1.2 and 1.5 mA cm ˇ2 is shown in Fig. 1. seen to increase with density a constant time. At higher greater than 0.9 , stabilizes at shorter duration. This trend typical characteristic pertaining growth mechanism oxide film formation. moment power on,
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