Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP

摘要: This thesis investigates different material systems and processing technology for high temperature compatible laser diodes used in volume applications within the 1.3-μm telecom wavelength window. Laser built from such materials are much desired order to eleminate need active control needed current systems, which significantly increases both complexity, size cost. The structures were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) evaluation of was performed using characterization methods as High-Resolution X-Ray Diffraction (HR-XRD), Photoluminescence (PL), Time-Resolved (TR-PL). Fabrication Fabry-Perot lasers with geometries check quality performance. A novel in-situ etching technique developed use i future more advanced, buried hetrostructure lasers. first studied system AlGaInAsP/InGaAsP/InP. To handle a 5-element precision required, modelling heterostructure properties performed. addition Al InGaAsP barrier allows better electron confinement little change valence band properties. optimum aluminium content found be about 12%. Although effect could identified, it not sufficient T0 only 90 K up 60 °C. second InGaP/InAsP/ InP initially looked quite promising quantum well design point view but encountered severe problems device integration further work discontinued. main effort therefore devoted third system: AlGaInAs/AlGaInAs/InP. is unknown has hitherto widespread application fibre optic applications. In this work, MOCVD growth 1.3 μ;m optimized ridge waveguide devices excellent performance fabricated (T0 = 97 at 85 °C). identified suitable structure since requires single epitaxial growth, thus avoiding problem oxidation based structures. dynamic 110 °C fabrication highly reliable (lifetime >7000 h). yield uncooled process now been transferred production applied short length 10 Gb/s multimode links. improve usefulness Al-containing even higher developments towards fully geometry also pursued. overcome difficulty containing layers mesa walls an implemented. Different chemistry approaches investigated results reported.