Tungsten deposition process using germanium-containing reducing agent
作者： Raashina Humayun , Sudha Manandhar , Michal Danek
DOI:
关键词: Electrical resistivity and conductivity 、 Chemical engineering 、 Deposition (phase transition) 、 Layer (electronics) 、 Reducing agent 、 Nucleation 、 Germanium 、 Materials science 、 Inorganic chemistry 、 Semiconductor 、 Tungsten
摘要: Methods for depositing low resistivity tungsten in features of substrates semiconductor processing are disclosed herein. involve using a germanium-containing reducing agent during nucleation layer deposition to achieve thin, layers.
google.co.uk 参考文章(197)
Charles D. Iacovangelo, Activation of refractory metal surfaces for electroless plating ,(1987)
Shrinivas Govindarajan, Anthony Ciancio, Apparatus and method of a low pressure, two-step nucleation tungsten deposition ,(2000)
Shawn Diane Hancock, Method for nucleation of CVD tungsten films ,(1997)
Noriaki Oda, Semiconductor device having a gate electrode film containing nitrogen ,(1998)
Liang-Tung Chang, Plasma enhanced CVD deposition of tungsten and tungsten compounds ,(1998)
Kei Kurosawa, Method for manufacturing an electrical connection between conductor levels ,(1988)
Anthony Konecni, Girish Dixit, Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films ,(1999)
Aaron Fellis, Juwen Gao, Francisco Juarez, Chiukin Steven Lai, Michal Danek, Methods and apparatuses for atomic layer cleaning of contacts and vias ,(2014)
Raashina Humayun, Sudha Manandhar, Michal Danek, Tungsten nucleation process to enable low resistivity tungsten feature fill ,(2014)
Toshiya Yokogawa, Masao Uchida, Kunimasa Takahashi, Makoto Kitabatake, Method for growing semiconductor film and method for fabricating semiconductor device ,(2000)