High-Performance Devices Based on InSe–In1–xGaxSe Van der Waals Heterojunctions

作者： Miaomiao Yu , Yunxia Hu , Feng Gao , Mingjin Dai , Lifeng Wang

关键词: Diode 、 Direct and indirect band gaps 、 van der Waals force 、 Photodetector 、 Heterojunction 、 Optoelectronics 、 Photoconductivity 、 Materials science

摘要: … the high-performance devices based on multilayer InSe–In 0.24 Ga 0.76 Se van der Waals … Ga 0.76 Se vdWH device is demonstrated as a high-performance forward diode, photodiode…