作者: Josee Vedrine , Young-Rae Hong , Andrew P. Marencic , Richard A. Register , Douglas H. Adamson
DOI: 10.1063/1.2794010
关键词: Materials science 、 Nanotechnology 、 Quantum dot 、 Grain boundary 、 Etching (microfabrication) 、 Wafer 、 Silicon 、 Layer (electronics) 、 Nanolithography 、 Bilayer
摘要: Hexagonal arrays of nanoscale holes or metal dots (25nm in diameter and 39nm period), with orientational order extending over the entire square-centimeter array area, were fabricated on unpatterned silicon wafer substrates using a shear-aligned sphere-forming diblock copolymer template. Since two more layers spherical nanodomains are required to achieve alignment block film, but pattern transfer requires single layer, multistep etching process was developed, whereby top layer bilayer evenly removed, leaving ordered bottom as fabrication template for hole dot free from grain boundaries.