MOS-gated thyristor
作者： Paul A. Gough
DOI:
关键词: Cathode 、 Semiconductor device 、 p–n junction 、 Electrical engineering 、 Charge carrier 、 Gate turn-off thyristor 、 Static induction thyristor 、 Emitter turn off thyristor 、 Thyristor 、 Optoelectronics 、 Materials science
摘要: A semiconductor device includes a thyristor (4,5,8,9) in which connection is made to the cathode region (9) of by means an MOS structure. The structure provided fifth (11) forming pn junction with (9), sixth (13) contact electrode (C) and (14) (11), insulated gate (15) overlying conduction channel area (110) for defining gateable conductive path charge carriers into initiate action. thus controlled voltage applied (15), enabling flow be stemmed application appropriate oxide. electrically connected provide extraction during turn-off thyristor, thereby improving controllable current capability thyristor.
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