Optical and Electrical Properties of Tin Oxide Films

作者: Kozo Ishiguro , Taizo Sasaki , Toshihiro Arai , Isamu Imai

DOI: 10.1143/JPSJ.13.296

关键词: Thermoelectric effectEffective mass (solid-state physics)Hall effectCondensed matter physicsOptoelectronicsScatteringTin oxideSeebeck coefficientBand gapMaterials scienceIndium tin oxide

摘要: The electrical and optical properties of the transparent conducting tin oxide films were studied experimentally. observed Hall effect Seebeck show that present specimens are n -type conductor whose carrier density is 10 19 ∼10 20 cm -3 . measurements made it clear fundamental energy gap was about 4 ev plasma frequency carriers lied in near infrared region. By comparing transmission reflection with theoretical values which can be calculated electrically measured constants, effective mass determined to 1/5 free electron mass. It will discussed conclusion that, satisfy thermoelectric power relation this small mass, we must assume Coulomb scattering impurity ions predominant mechanism films.

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